Package structure and method for forming the same

ABSTRACT

A package structure and method for forming the same are provided. The package structure includes a substrate and a package layer formed over the substrate. The package structure further includes an alignment structure formed over the package layer, and the alignment structure includes a first alignment mark formed in a trench, and the trench has a step-shaped structure.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer, andindividual dies on the wafer are singulated by sawing between theintegrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, for example, or inother types of packaging.

New packaging technologies, such as package on package (PoP), have begunto be developed, in which a top package with a device die is bonded to abottom package, with another device die. By adopting these new packagingtechnologies, various packages with different or similar functions areintegrated together.

Although existing package structures and methods of fabricating packagestructure have generally been adequate for their intended purpose, theyhave not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 shows a top-view representation of a package structure, inaccordance with some embodiments of the disclosure.

FIG. 2 shows a top-view representation of a package structure, inaccordance with some embodiments of the disclosure.

FIGS. 3A-3F show cross-sectional representations of various stages offorming a package structure, in accordance with some embodiments of thedisclosure.

FIGS. 4A-4I show cross-sectional representations of various stages offorming the alignment structure, in accordance with some embodiments ofthe disclosure.

FIGS. 5A-5D shows top-view representation of the first openings, inaccordance with some embodiments of the disclosure.

FIGS. 6A-6D show top-view representations of the first openings, inaccordance with some embodiments of the disclosure.

FIGS. 7A-7D show top-view representations of the second opening in thethird region C, in accordance with some embodiments of the disclosure.

FIG. 8 shows a top-view representation of the first trench and thesecond trench, in accordance with some embodiments of the disclosure.

FIG. 9 shows a top-view representation of the first trench, the secondtrench and the third trench, in accordance with some embodiments of thedisclosure.

FIG. 10 shows a top-view representation of the alignment structure, inaccordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It should be understood that additionaloperations can be provided before, during, and after the method, andsome of the operations described can be replaced or eliminated for otherembodiments of the method.

Embodiments for a package structure and method for forming the same areprovided. FIG. 1 shows a top-view representation of a package structure,in accordance with some embodiments of the disclosure.

The package structure includes a package layer 140 over a substrate 102(shown in FIG. 3D). The substrate 102 is a portion of the wafer. Thesubstrate 102 includes a number of die regions 10 and a number ofperipheral regions 20. A number of semiconductor dies 11 are formed inthe die regions 10. A number of scribe lines 15 are formed between twoadjacent semiconductor dies 11. An alignment structure 30 is formed inthe peripheral regions 20 over the scribe lines 15. An alignmentstructure 30 provides an alignment function when different layers aredeposited or patterned during the fabrication process.

FIG. 2 shows a top-view representation of a package structure, inaccordance with some embodiments of the disclosure.

The substrate 102 includes a number of sub-die regions 10 a, a gapregion 10 b and a number of peripheral regions 20. A number of sub-dies11 a and 11 b are formed in the sub-die regions 10 a. Two adjacentsub-dies 11 a, 11 b are electrically connected to each other by metallines 14. The gap region 10 b is between the two adjacent sub-dieregions 10 a. Unlike FIG. 1, the alignment structure 30 is formed overthe gap region 10 b. Therefore, the peripheral regions 20 in FIG. 2 maybe reduced further to increase the area of the sub-die regions 10 a foroccupying the sub-dies 11 a, 11 b.

FIGS. 3A-3F show cross-sectional representations of various stages offorming a package structure, in accordance with some embodiments of thedisclosure. The package structure is applied to a wafer level package(WLP).

As shown in FIG. 3A, a substrate 102 is provided. The substrate 102 is atemporary support substrate. In some embodiments, the substrate 102 ismade of semiconductor material, ceramic material, polymer material,metal material, another applicable material, or a combination thereof.In some embodiments, the substrate 102 is a glass substrate. In someembodiments, the substrate 102 is a semiconductor substrate, such assilicon wafer.

An adhesive layer 104 is formed on the substrate 102. In someembodiments, the adhesive layer is made of glue or foil. In some otherembodiments, the adhesive layer 104 is made of a photosensitive materialwhich is easily detached from the substrate 102 by light irradiation. Insome embodiments, the adhesive layer 104 is made of a heat-sensitivematerial.

Afterwards, a base layer 106 is formed on the adhesive layer 104. Insome embodiments, the base layer 106 is made of polymer or apolymer-containing layer. The base layer 106 may be apoly-p-phenylenebenzobisthiazole (PBO) layer, a polyimide (PI) layer, asolder resist (SR) layer, an Ajinomoto buildup film (ABF), a die attachfilm (DAF), another applicable material, or a combination thereof. Insome embodiments, the adhesive layer 104 and the base layer 106 aredeposited or laminated over the substrate 102.

Afterwards, a seed layer 108 is formed over the base layer 106. In someembodiments, the seed layer 108 is made of metal material, such ascopper (Cu), titanium (Ti), copper alloy, titanium alloy, or acombination thereof. In some embodiments, the seed layer 108 is formedby a deposition process, such as chemical vapor deposition process(CVD), physical vapor deposition process (PVD), another applicableprocess, or a combination thereof.

A conductive structure 114 is formed over the seed layer 108. Theconductive structure 114 may be made of metal material, such as copper(Cu), aluminum (Al), tungsten (W), nickel (Ni), alloy thereof, or acombination thereof.

As a result, the conductive structure 114 and the seed layer 108 are incombination referred to as through InFO vias (TIV) 116, which are alsoreferred to as through-vias 116. In some embodiments, the conductivestructure 114 and the seed layer 108 are made of the same material, andtherefore there is no distinguishable interface therebetween.

Afterwards, a semiconductor die 120 is formed over the base layer 106through an adhesive layer 122, as shown in FIG. 3B, in accordance withsome embodiments of the disclosure. The height of the conductivestructure 114 is higher than the height of the semiconductor die 120.The top surface of the conductive structure 114 is higher than the topsurface of the semiconductor die 120.

In some embodiments, the adhesive layer 122 is die attach film (DAF).The semiconductor die 120 includes a semiconductor substrate 124, aninsulating layer 126, a conductive pad 128, a passivation layer 130 anda connector 132. The conductive pad 128 is formed in the insulatinglayer 126, and the connector 132 is formed in the passivation layer 130.The connector 132 is electrically connected to the conductive pad 128.

Other device elements may be formed in the semiconductor die 120. Thedevice elements include transistors (e.g., metal oxide semiconductorfield effect transistors (MOSFET), complementary metal oxidesemiconductor (CMOS) transistors, bipolar junction transistors (BJT),high-voltage transistors, high-frequency transistors, p-channel and/or nchannel field effect transistors (PFETs/NFETs), etc.), diodes, and/orother applicable elements. Various processes are performed to formdevice elements, such as deposition, etching, implantation,photolithography, annealing, and/or other applicable processes.

An insulating layer 136 is spontaneously formed on the conductivestructure 114, as shown in FIG. 3C, in accordance with some embodimentsof the disclosure. The insulating layer 136 surrounds the conductivestructure 114. In other words, the conductive structure 114 and the seedlayer 108 are surrounded by the insulating layer 136.

The conductive structure 114 includes a metal material, and theinsulating layer 136 includes a metal element that is the same as thatof the metal material. In some embodiments, the insulating layer 136 isa native oxide layer. In some embodiments, the conductive structure 114includes copper (Cu), and the insulating layer 136 includes cupric oxideand cuprous oxide (CuO and Cu₂O).

Afterwards, a package layer 140 is formed over the semiconductor die 120and the insulating layer 136, as shown in FIG. 3D, in accordance withsome embodiments of the disclosure.

The package layer 140 is made of molding compound, such as liquid epoxy,deformable gel, a resin, polyimide, polybenzoxazole (PBO),benzocyclobutene (BCB), a silicone, an acrylate or the like.

Afterwards, a planarizing process is performed to expose thesemiconductor die 120 and the through InFO vias (TIV) 116, as shown inFIG. 3E, in accordance with some embodiments of the disclosure. Afterthe planarizing process, the top surface of the semiconductor die 120 issubstantially level with that of the conductive structure 114. In someembodiments, the planarizing process includes grinding process, achemical mechanical polishing (CMP) process, an etching process, anotherapplicable process, or a combination thereof.

After the planarizing process, a interconnect structure 146 is formedover the package layer 140, as shown in FIG. 3F, in accordance with someembodiments of the disclosure. The interconnect structure 146 includes afirst redistribution lines (RDL) 144 a, a via 143 and a second RDL 144 bformed in the passivation layer 142. The via 143 is between the firstRDL 144 a and the second RDL 144 b. The first RDL 144 a is electricallyconnected to the semiconductor die 120 and the through InFO vias (TIV)116.

In some embodiments, the first RDL 144 a and second RDL 144 b are madeof metal materials, such as copper (Cu), copper alloy, aluminum (Al),aluminum alloy, tungsten (W), tungsten alloy, titanium (Ti), titaniumalloy, tantalum (Ta), or tantalum alloy. In some embodiments, the firstRDL 144 a and the second RDL 114 b are formed by plating, electrolessplating, sputtering or chemical vapor deposition (CVD). In someembodiments, the passivation layer 142 is made of polybenzoxazole (PBO),benzocyclobutene (BCB), silicone, acrylates, siloxane, or a combinationthereof. In some other embodiments, the passivation layer 142 is made ofnon-organic materials, such as silicon oxide, un-doped silicate glass,silicon oxynitride, solder resist (SR), silicon nitride, or HMDS(hexamethyldisilazane).

Afterwards, an electrical connector 148 is formed over the interconnectstructure 146. In some embodiments, the electrical connector 148includes the solder ball, metal pillar, another applicable connector. Insome embodiments, an under bump metallurgy (UBM) layer (not shown) isformed below the electrical connector 148.

It should be noted that the semiconductor dies 120 are formed in thesub-die regions 10 a, and the alignment structure 30 is formed in thegap 10 b. The fabricating processes for forming the alignment structure30 are described in detail later.

FIGS. 4A-4I show cross-sectional representations of various stages offorming the alignment structure 30, in accordance with some embodimentsof the disclosure.

As shown in FIG. 4A, a first dielectric layer 410 is formed over thepackage layer 140. In some embodiments, the first dielectric layer 410is made of polybenzoxazole (PBO), benzocyclobutene (BCB), silicone,acrylates, siloxane, or a combination thereof. In some otherembodiments, the first dielectric layer 410 is made of non-organicmaterials, such as silicon oxide, un-doped silicate glass, siliconoxynitride, solder resist (SR), silicon nitride, HMDS(hexamethyldisilazane). The material of the first dielectric layer 410may be the same as the material of the passivation layer 142, and thefirst dielectric layer 410 and the passivation layer 142 may be formedin the same operation.

The first dielectric layer 410 includes a first opening 411. The topsurface of the package layer 140 is exposed by the first opening 411. Insome other embodiments, more than one first opening 411 is formed in thefirst dielectric layer 410. The first openings 411 are configured toprovide an alignment function.

FIGS. 5A-5D shows top-view representation of the first openings 411, inaccordance with some embodiments of the disclosure. FIG. 4A is across-sectional representation along I-I′ line of FIG. 5A. Each of thefirst openings 411 has a circle-shaped top-view profile. Morespecifically, the first openings 411 have rounded edges. The roundededges are used to reduce stress, and thus the problem of cracking may beavoided.

As shown in FIG. 5A, the number of first openings 411 is greater thanthree, and these first openings 411 are arranged along a first direction(e.g. the X-axis) and a second direction (e.g. the Y-axis). The firstdirection is orthogonal to the second direction. If the first openings411 are arranged along in single direction, the alignment function isnot good enough. There are three first openings 411 in the first regionA. In some other embodiments, four, five or six first openings 411 areformed in the first region A.

In the first region A, an area is defined by a first width W₁ and afirst length L₁. The first region A may have rectangular shape or squareshape. Each of the first openings 411 has a first pitch P₁. In otherwords, the ellipse-shaped or circle-shaped structure has a diameter P₁.In some embodiments, the first width W₁ is in a range from about 40 μmto about 70 μm. In some embodiments, the first length L₁ in a range fromabout 40 μm to about 70 μm. In some embodiments, the first pitch P₁ isin a range from about 15 μm to about 25 μm.

If the first openings 411 have sharp corners or edges, some stress mayoccur on the sharp corners or edges. As a result, some cracks may formdue to the stress concentrated on the sharp corners or edges. In orderto prevent cracking, the first openings 411 are formed to have roundedcorners and edges.

As shown in FIG. 5B, there are three first openings 411 in the firstregion A, but the arrangement of the first openings 411 in FIG. 5B isdifferent than that in FIG. 5A.

As shown in FIG. 5C, there are four first openings 411 in the firstregion A. In some embodiments, each of the first openings 411 is thesame size. In some other embodiments, each of the first openings 411 isa different size.

As shown in FIG. 5D, there are three first openings 411 in the firstregion A.

FIGS. 6A-6D show top-view representations of the first openings 411, inaccordance with some embodiments of the disclosure. FIGS. 6A-6D aresimilar to FIGS. 5A-5D, the difference is that each of the firstopenings 411 has an ellipse-shaped top-view profile in FIGS. 6A-6D.

Afterwards, a first alignment mark 412 and a second alignment mark 414are formed over the first dielectric layer 410, as shown in FIG. 4B, inaccordance with some embodiments of the disclosure.

The first alignment mark 412 and the second alignment mark 414 are madeof the conductive material, such as metal. In some embodiments, themetal includes copper (Cu), copper alloy, aluminum (Al), aluminum alloy,tungsten (W), tungsten alloy, titanium (Ti), titanium alloy, tantalum(Ta), or tantalum alloy. In some embodiments, the first alignment mark412, the second alignment mark 414 and the via 143 (shown in FIG. 3F)are formed simultaneously. In other words, the first alignment mark 412,the second alignment mark 414 and the via 143 are in the same level.

Afterwards, a second dielectric layer 420 is formed over the firstdielectric layer 410, as shown in FIG. 4C, in accordance with someembodiments of the disclosure. In addition, the second dielectric layer420 is formed over the first alignment mark 412 and the second alignmentmark 414.

In some embodiments, the second dielectric layer 420 and the firstdielectric layer 410 are made of the same material.

Afterwards, a portion of the second dielectric layer 420 is removed, asshown in FIG. 4D, in accordance with some embodiments of the disclosure.As a result, the second dielectric layer 420 includes a first trench 423and a second opening 421.

The first alignment mark 412 is exposed by the first trench 423. Aportion of the top surface of the second alignment mark 414 is exposedby the second opening 421.

FIGS. 7A-7D show top-view representations of the second opening 421 inthe third region C, in accordance with some embodiments of thedisclosure. FIG. 4D is a cross-sectional representation along II-II′line of FIG. 7A.

As shown in FIG. 7A, in the third region C, an area is defined by asecond width W₂ and a second length L₂. The first region A may haverectangular shape or square shape. Each of the first openings 411 has asecond pitch P₂. In other words, the ellipse-shaped or circle-shapedstructure has a diameter P₂. In some embodiments, the second width W₂ isin a range from about 40 μm to about 70 μm. In some embodiments, thesecond length L₂ in a range from about 40 μm to about 70 μm. In someembodiments, the second pitch P₂ is in a range from about 15 μm to about25 μm.

There are three second openings 421 formed in the third region C. Eachof the second openings 421 has rounded corners or edges to preventcracking. The second alignment mark 414 is exposed by the secondopenings 421.

As shown in FIG. 7B, there are three second openings 421 formed in thethird region C. However, the arrangement of the second openings 421 inFIG. 7B is different from the arrangement of the second openings 421 inFIG. 7A.

As shown in FIG. 7C, there are four second openings 421 formed in thethird region C. In some embodiments, the size of each of the four secondopenings 421 is the same. In some other embodiments, the size of each ofthe four second openings 421 is different.

As shown in FIG. 7D, there are three second openings 421 formed in thethird region C. Two of the three second openings 421 are at the twocorners of the third region C, and one is at the middle along the secondlength L₂.

Afterwards, a third alignment mark 422 and a fourth alignment mark 424are formed over the second dielectric layer 420, as shown in FIG. 4E, inaccordance with some embodiments of the disclosure.

The third alignment mark 422 and the fourth alignment mark 424 are madeof the conductive material, such as metal. The metal includes copper(Cu), copper alloy, aluminum (Al), aluminum alloy, tungsten (W),tungsten alloy, titanium (Ti), titanium alloy, tantalum (Ta), ortantalum alloy. In some embodiments, the three alignment mark 422, thefourth alignment mark 424 and a second RDL 144 b (shown in FIG. 3F) inthe sub-die regions 10 a are formed simultaneously.

It should be noted that the second alignment mark 414 is made ofconductive materials, such as metal material, and the second alignmentmark 414 is between the first dielectric layer 410 and the seconddielectric layer 420. If no the second alignment mark 414 is between thefirst dielectric layer 410 and the second dielectric layer 420, somecracks may generated along the second opening 421 due to the stressconcentration. Since the metal material of second alignment mark 414 isdifferent from the dielectric materials, the stress will not concentrateon single material. Therefore, the stress is reduced and the problems ofcracking are avoided.

Afterwards, a third dielectric layer 430 is formed over the seconddielectric layer 420, as shown in FIG. 4F, in accordance with someembodiments of the disclosure. It should be noted that the thirddielectric layer 430 is in contact with the exposed top surface of thesecond alignment mark 414. The second alignment mark 414 is between thefirst dielectric layer 410 and the third dielectric layer 430. Asmentioned above, the material of the second alignment mark 414 isdifferent from that of the first dielectric layer 410, the thirddielectric layer 430. Therefore, the stress is not concentrated on thesecond openings 421, and the problems of cracking are reduced.

Afterwards, a portion of the third dielectric layer 430 is removed, asshown in FIG. 4G, in accordance with some embodiments of the disclosure.As a result, the third dielectric layer 430 includes a second trench 433and a third opening 431.

FIG. 8 shows a top-view representation of the first trench 423 and thesecond trench 433, in accordance with some embodiments of thedisclosure. FIG. 4G is a cross-sectional representation along line ofFIG. 8.

The second trench 433 is above the first trench 423. The width and areaof the second trench 433 are greater than the width and area of thefirst trench 423. In the second region B, the sidewalls of the firsttrench 423 are not aligned to the sidewalls of the second trench 433.The sidewalls of the first trench 423 and the sidewalls of the secondtrench 433 form a step-shaped structure. In other words, the firstalignment mark 412 is formed in the step-shaped trench. Morespecifically, a first sidewall of the first dielectric layer 410 and asecond sidewall of the second dielectric layer 420 adjacent to the firstalignment mark 412 forms a step-shaped structure, and the firstalignment mark 412 is formed in the step-shaped trench.

If the first sidewalls of the first trench 423 are aligned to the secondsidewalls of the second trench 433, the stress will be concentrated onthe first sidewalls and the second sidewalls. The crack may generatealong the first sidewalls and the second sidewalls. Since the firstsidewalls of the first trench 423 are not aligned to the secondsidewalls of the second trench 433, the stress is dispersed and notconcentrated on the sidewalls. Therefore, the issue of cracking isresolved.

The first alignment mark 412 is exposed by the first trench 423 and thesecond trench 433, and it has a L-shaped top-view profile. The firstalignment mark 412 may have another shape when seen from a top-viewaccording to actual application.

Afterwards, a fifth alignment mark 432 and a sixth alignment mark 434are formed over the third dielectric layer 430, as shown in FIG. 4H, inaccordance with some embodiments of the disclosure. The fifth alignmentmark 432 and a sixth alignment mark 434 are made of conductive material,such as metal or alloy.

Afterwards, a fourth dielectric layer 440 is formed over the fifthalignment mark 432 and the sixth alignment mark 434, as shown in FIG.4I, in accordance with some embodiments of the disclosure. The fourthdielectric layer 440 has a third trench 443 to expose the firstalignment mark 412 and a fourth opening 441 to expose the top surface ofthe sixth alignment mark 434.

FIG. 9 shows a top-view representation of the first trench 423, thesecond trench 433 and the third trench 443, in accordance with someembodiments of the disclosure. FIG. 4I is a cross-sectionalrepresentation along IV-IV′ line of FIG. 9.

As shown in FIG. 9, in the second region B′, the first trench 423, thesecond trench 433 and the third trench 443 form a step-shaped structure.The width of the step-shaped structure is gradually increased frombottom to top. The first trench 423, the second trench 433 and the thirdtrench 443 independently have an ellipse-shaped or circle-shapedstructure.

FIG. 10 shows a top-view representation of the alignment structure 30 atdifferent regions A-G, in accordance with some embodiments of thedisclosure.

As shown in FIG. 10, in the first region A, the first dielectric layer410 has at least three first openings 411. In the second region B′, thefirst alignment mark 412 is exposed by the first trench 423, the secondtrench 433 and the third trench 443. A step-shaped structure isconstructed by the first trench 423, the second trench 433 and the thirdtrench 443. Each of the first trench 423, the second trench 433 and thethird trench 443 has an ellipse-shaped or circle-shaped top-viewprofile. In the third region C, the second alignment mark 414 made ofconductive material is exposed by the second opening 421.

In the fourth region D, the third alignment mark 422 is formed over thesecond dielectric layer 420. In the fifth region E, the fourth alignmentmark 424 is formed in the third dielectric layer 430, and a portion ofthe fourth alignment mark 424 is exposed by the third opening 431. Inthe sixth region F, the fifth alignment mark 432 is formed over thethird dielectric layer 430. In the seventh region G, the sixth alignmentmark 441 is exposed by the fourth opening 441.

It should be noted that the pattern of the first openings 411 in thefirst region A, the pattern of the second openings 421 in the thirdregion C, the pattern of the third opening 431 in the region E, and thepattern of the fourth opening 441 in the seventh region G are differentto identify the location or the level of these alignment marks.

It should be noted that the first alignment mark 412 is exposed by thestep-shaped structure to prevent cracking. In addition, the conductivematerials are formed between two dielectric layers to reduce thecracking. For example, the second alignment mark 414 is between thefirst dielectric layer 410 and the second dielectric layer 420, and thefourth alignment mark 424 is between the second dielectric layer 420 andthe third dielectric layer 430. Furthermore, the first openings 411, thesecond openings 421, the third openings 431 and the third openings 441independently have rounded edges to reduce cracking.

Embodiments for forming a package structure and method for forming thesame are provided. A semiconductor die is formed over a substrate, and apackage layer covers the semiconductor die. An alignment structure isformed over the package layer. The alignment structure includes a firstalignment mark formed in a step-shaped trench to reduce the stress. Thealignment structure further includes a conductive second alignment markbetween two dielectric layers to reduce the stress. The dielectric layerhas an opening to expose the top surface of the second alignment mark.Therefore, the problems of cracking are reduced, and the performance ofthe package structure is further improved.

In some embodiments, a package structure is provided. The packagestructure includes a substrate and a package layer formed over thesubstrate. The package structure further includes an alignment structureformed over the package layer, and the alignment structure includes afirst alignment mark formed in a trench, and the trench has astep-shaped structure.

In some embodiments, a package structure is provided. The packagestructure includes a substrate and a plurality of semiconductor diesformed over the substrate. The package structure also includes a packagelayer formed over the semiconductor dies and a first dielectric layerformed over the package layer. The package structure further includes afirst alignment mark and a second alignment mark formed over the firstdielectric layer, and the first alignment mark and the second alignmentmark are made of conductive material. The package structure furtherincludes a second dielectric layer formed over the first dielectriclayer, and the second dielectric layer has an opening to expose aportion of top surface of the second alignment mark.

In some embodiments, a package structure is provided. The packagestructure includes a substrate and a package layer formed over thesubstrate. The package structure includes a first dielectric layerformed over the package layer, and the first dielectric layer has atleast three openings to expose a top surface of the package layer. Thepackage structure also includes a first alignment mark formed over thefirst dielectric layer and a second dielectric layer formed over thefirst dielectric layer. The package structure further includes a thirddielectric layer formed over the second dielectric layer, and the seconddielectric layer has a first trench to expose the first alignment mark.The third dielectric layer has a second trench to expose the firstalignment mark, and the sidewalls of the first trench and the sidewallsof the second trench form a step-shaped structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A package structure, comprising: a substrate; apackage layer formed over the substrate; and an alignment structureformed over the package layer, wherein the alignment structure comprisesa first alignment mark formed in a trench, and the trench has astep-shaped structure.
 2. The package structure as claimed in claim 1,further comprising: a plurality of semiconductor dies formed over thesubstrate; and a package layer adjacent to the semiconductor dies. 3.The package structure as claimed in claim 1, further comprising: ascribe line between adjacent semiconductor dies, wherein the alignmentstructure is formed over the scribe line.
 4. The package structure asclaimed in claim 1, wherein each of the semiconductor dies comprises aplurality of sub-dies with a gap region between the sub-dies, and thealignment structure is formed over the gap region.
 5. The packagestructure as claimed in claim 1, wherein the trench has anellipse-shaped or circle-shaped top-view profile.
 6. The packagestructure as claimed in claim 1, further comprising: a first dielectriclayer formed over the package layer, wherein the first dielectric layercomprises a first opening with an ellipse-shaped or circle-shapedtop-view profile.
 7. The package structure as claimed in claim 1,wherein the alignment structure comprises a second alignment mark formedover the package layer, and the first alignment mark and the secondalignment mark are in the same level.
 8. The package structure asclaimed in claim 1, further comprising: a first dielectric layer formedover the package layer, wherein the second alignment mark is formed onthe first dielectric layer; a second dielectric layer formed over thefirst dielectric layer, wherein second dielectric layer comprises asecond opening to expose a portion of the second alignment mark, suchthat an exposed top surface of the second alignment mark is not coveredby the second dielectric layer.
 9. The package structure as claimed inclaim 8, further comprising: a third dielectric layer formed over thesecond dielectric layer, wherein the third dielectric layer is incontact with the exposed top surface of the second alignment mark. 10.The package structure as claimed in claim 8, wherein the second openinghas an ellipse-shaped or circle-shaped top-view profile.
 11. The packagestructure as claimed in claim 1, further comprising: an interconnectstructure formed over the package layer, wherein the interconnectstructure is electrically connected to the semiconductor dies.
 12. Apackage structure, comprising: a substrate; a plurality of semiconductordies formed over the substrate; a package layer formed over thesemiconductor dies; a first dielectric layer formed over the packagelayer; a first alignment mark and a second alignment mark formed overthe first dielectric layer, wherein the first alignment mark and thesecond alignment mark are made of conductive material; and a seconddielectric layer formed over the first dielectric layer, wherein thesecond dielectric layer has an opening to expose a portion of the topsurface of the second alignment mark.
 13. The package structure asclaimed in claim 12, wherein the first alignment mark is not covered bythe first dielectric layer and the second dielectric layer, a firstsidewall of the first dielectric layer and a second sidewall of thesecond dielectric layer adjacent to the first alignment mark forms astep-shaped structure, and the first alignment mark is formed in thestep-shaped structure.
 14. The package structure as claimed in claim 12,wherein the opening has an ellipse-shaped or circle-shaped top-viewprofile.
 15. The package structure as claimed in claim 12, furthercomprising: a third dielectric layer formed over the second dielectriclayer, wherein the third dielectric layer is in contact with the exposedtop surface of the second alignment mark.
 16. The package structure asclaimed in claim 12, further comprising: an interconnect structureformed over the package layer, wherein the interconnect structure iselectrically connected to the semiconductor die.
 17. A packagestructure, comprising: a substrate; a package layer formed over thesubstrate; a first dielectric layer formed over the package layer,wherein the first dielectric layer has at least three openings to exposea top surface of the package layer; a first alignment mark formed overthe first dielectric layer; a second dielectric layer formed over thefirst dielectric layer; and a third dielectric layer formed over thesecond dielectric layer, wherein the second dielectric layer has a firsttrench to expose the first alignment mark, the third dielectric layerhas a second trench to expose the first alignment mark, and thesidewalls of the first trench and the sidewalls of the second trenchform a step-shaped structure.
 18. The package structure as claimed inclaim 17, further comprising: a plurality of semiconductor dies formedover the substrate; an interconnect structure formed over thesemiconductor dies; and an electrical connector formed over theinterconnect structure.
 19. The package structure as claimed in claim17, wherein the openings of the first dielectric layer have roundededge.
 20. The package structure as claimed in claim 17, furthercomprising: a second alignment mark formed over the first dielectriclayer, wherein a top surface of the second alignment mark is in contactwith the third dielectric layer.